Method of forming schottky diode with charge balance structure

Details Method of forming schottky diode with charge balance structure Method of forming schottky diode with charge balance structure

2006-03-17

2008-09-30

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Forming schottky junction

C438S212000, C438S268000, C438S576000, C257S328000, C257S476000

Reexamination Certificate

active

07429523

ABSTRACT:
a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the semiconductor region, wherein at least two of the charge control electrodes are adapted to be biased differently from one another. The semiconductor region is overlaid with a metal layer to thereby form a Schottky barrier therebetween.

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