Method of forming Schottky barrier junctions having improved bar

Details Method of forming Schottky barrier junctions having improved bar Method of forming Schottky barrier junctions having improved bar

1975-12-31

1976-10-19

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

29590, 357 15, 427 86, 427 91, 427125, 427374R, 427398R, B05D 512

Patent

active

039872165

ABSTRACT:
A method is disclosed for forming Schottky barrier junctions having improved barrier height characteristics. The method involves the use of a layer of polysilicon deposited upon the Schottky metal prior to sintering. The polysilicon layer acts as a source from which silicon is diffused into the metal during the sintering operation. After sintering the junction is quenched or cooled at a rapid rate whereby outdiffusion of the silicon is prevented.

REFERENCES:
patent: 3382568 (1968-05-01), Kuiper
patent: 3413157 (1968-11-01), Kuiper
patent: 3424627 (1969-01-01), Michel et al.
patent: 3555669 (1971-01-01), Tarn
patent: 3725309 (1973-04-01), Ames et al.
patent: 3780320 (1973-12-01), Dorler et al.
patent: 3924264 (1975-12-01), Dorler et al.
patent: 3935586 (1976-01-01), Landheer et al.

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