Method of forming robust interconnect and contact structures in

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

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257773, 257905, 438637, 438621, 438618, 438633, H01L 2352

Patent

active

058616764

ABSTRACT:
A conducting trench in a dielectric layer can function as both (a) a plurality of contacts and (b) an interconnect in a semiconductor device. The conducting trench may be made by depositing a conductor in a trough formed in a dielectric layer of the device.

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08/577,751 Dec. 22, 1995 Pending.

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