Method of forming resist pattern and photomask therefor

Details Method of forming resist pattern and photomask therefor Method of forming resist pattern and photomask therefor

1992-07-07

1994-06-28

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, G03F 900

Patent

active

053246004

ABSTRACT:
In a photomask for use in forming a resist pattern by projection exposure of a resist through the photomask, a phase shifter has a first edge part whose image is to be transferred and a second edge part whose image is not to be transferred. A light attenuator is provided to cover the first edge part. The light attenuator may include an array of opaque stripes arranged at a pitch of not more than the limit of resolution, i.e., 0.5.times..lambda./NA, where .lambda. represents the wavelength of light used for the projection exposure, and NA represents the numerical aperture of an optical system used for the projection exposure. In another embodiment, the light attenuator is formed to cover a shifter edge part in alignment with a line of a transmission mask. In a further embodiment, one or more light attenuators having different transparency are used to obtain lines of a resist pattern having different widths.

REFERENCES:
patent: 4890309 (1989-12-01), Smith et al.
patent: 5045417 (1991-09-01), Okamoto

Affiliated with

Also associated with

Rating

Method of forming resist pattern and photomask therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming resist pattern and photomask therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming resist pattern and photomask therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2376787