Method of forming resin film of desired pattern on semiconductor

Details Method of forming resin film of desired pattern on semiconductor Method of forming resin film of desired pattern on semiconductor

1997-08-05

1999-09-21

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

257668, 257642, 257643, 257792, H01L 2302, H01L 23495, H01L 2358, H01L 2329

Patent

active

059557796

ABSTRACT:
A method of forming a resin film pattern, comprising the steps of (A) producing a resin film layer soluble in an organic solvent, on a substrate such as silicon wafer, even engineering plastics being usable as a resin of the resin film layer; (B) forming a resist image of desired pattern on the organic solvent-soluble resin film layer; (C) etching each of those parts of the organic solvent-soluble resin film layer which are not covered with the resist image, using the organic solvent; and (D) removing the resist image from the resulting, organic solvent-soluble resin film layer using a resist image remover which contains 0.01-10.0 parts-by-weight of arylsulfonic acid with respect to 100 parts-by-weight of solvent having a solubility parameter of 5.0-11.0. The step (D) may well be followed by the step (E) of processing the substrate which includes the resin film layer, with alcohol.

REFERENCES:
patent: 3838984 (1974-10-01), Crane et al.
patent: 3868724 (1975-02-01), Perrino
patent: 4165294 (1979-08-01), Vander Mey
patent: 4624909 (1986-11-01), Saotome et al.
patent: 4733289 (1988-03-01), Tsurumaru
patent: 5430329 (1995-07-01), Harada et al.

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