Method of forming reproducible impurity zone of gallium or alumi

Details Method of forming reproducible impurity zone of gallium or alumi Method of forming reproducible impurity zone of gallium or alumi

1981-12-03

1984-01-17

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 148188, 357 91, H01L 21225, H01L 21425, H01L 2174

Patent

active

044262345

ABSTRACT:
The invention discloses a method for fabricating a semiconductor device comprising the steps of: forming, on an entire surface of a semiconductor substrate of one conductivity type, a first thin film of a diffusion coefficient greater than a diffusion coefficient of the substrate; forming, on an entire surface of the first thin film, a second thin film having a diffusion coefficient smaller than the diffusion coefficient of the first thin film; ion-implanting an impurity through the second thin film into the first thin film to form an impurity region, said impurity having a conductivity type opposite to the conductivity type of the substrate; and effecting annealing to set a junction depth of the impurity region to a predetermined value. According to the method of the invention, an impurity region having a desired sheet resistivity and a desired diffusion depth can be formed in the semiconductor substrate with excellent reproducibility and control. The formation of the lattice defect can be prevented and the carrier life time can be improved. Gallium is preferably used as the impurity according to the invention.

REFERENCES:
patent: 4063967 (1977-12-01), Graul et al.
patent: 4063973 (1977-12-01), Kirita et al.
patent: 4102715 (1978-07-01), Kambara
patent: 4146413 (1979-03-01), Yonezawa et al.
patent: 4296426 (1981-10-01), Giles
patent: 4313255 (1982-02-01), Shinozaki et al.
Baliga, B. Jayant, Journal of the Electrochemical Society-Solid-State Science and Technology, vol. 126, No. 2, pp. 292-296, Feb. 1979.

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