Method of forming recessed container cells by wet etching conduc

Details Method of forming recessed container cells by wet etching conduc Method of forming recessed container cells by wet etching conduc

1997-10-28

1999-10-05

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438155, 438244, 438397, H01L 2170, H01L 218242

Patent

active

059638141

ABSTRACT:
A container capacitor having a recessed conductive layer. The recessed conductive layer is typically made of polysilicon. The recessed structure reduces the chances of polysilicon "floaters," which are traces of polysilicon that remain on the surface of the substrate, coupling adjacent capacitors together to create short circuits. The disclosed method of creating such a recessed structure uses chemical mechanical planarization to remove the layer of polysilicon and an overlying layer of photoresist from the upper surface of the substrate in which a container is formed. A wet etch selectively isolates a rim of the polysilicon within the container to recess the a rim, while the remainder of the polysilicon in the container is protected by the layer of photoresist.

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