Method of forming recessed container cells

Details Method of forming recessed container cells Method of forming recessed container cells

1997-10-28

1999-03-30

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438243, H01L 2120

Patent

active

058888772

ABSTRACT:
A container capacitor having a recessed conductive layer. The recessed conductive layer is typically made of polysilicon. The recessed structure reduces the chances of polysilicon "floaters," which are traces of polysilicon that remain on the surface of the substrate, coupling adjacent capacitors together to create short circuits. The disclosed method of creating such a recessed structure uses chemical mechanical planarization to remove the layer of polysilicon and an overlying layer of photoresist from the upper surface of the substrate in which a container is formed. A dry etch selectively isolates a rim of the polysilicon within the container to recess the rim, while the remainder of the polysilicon in the container is protected by the layer of photoresist.

REFERENCES:
patent: 4847214 (1989-07-01), Robb et al.
patent: 5422294 (1995-06-01), Noble, Jr.

Affiliated with

Also associated with

Rating

Method of forming recessed container cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming recessed container cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming recessed container cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1214385