Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-05-09
2006-05-09
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C505S162000, C341S200000
Reexamination Certificate
active
07042004
ABSTRACT:
The present invention discloses a quantum system comprising computational elements, consisting of an insulated ring of superconductive material, and semi-closed rings, which are used as an interface or input/output facility between the quantum bit and the external world. Faraday induction is used to provide electromagnetic coupling between adjacent computational elements and between the computational elements with interface elements of the quantum system. Therefore the corresponding magnetic flux acts as an information carrier. Ferromagnetic cores are used to improve the magnetic coupling between adjacent elements of the quantum system.
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Kerner Christoph
Magnus Wim
Schoenmaker Wim
Coleman W. David
Interuniversitair Microelektronica Centrum (IMEC)
Katholieke Universiteit Leuven
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