Method of forming quantum dots for extended wavelength...

Semiconductor device manufacturing: process – Quantum dots and lines

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE29071, C257SE29168, C257SE49003

Reexamination Certificate

active

10514660

ABSTRACT:
A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots. The quantum dots of the active layer are then subject to less intermixing with the surrounding spacer and capping layers, and can also preserve a more strain-relaxed state, which results in a longer wavelength emission with a narrower inhomogeneous broadening. This method is particularly well suited to the growth of the active region of an optoelectronic device on a GaAs substrate.

REFERENCES:
patent: 5888885 (1999-03-01), Xie
patent: 6177684 (2001-01-01), Sugiyama
patent: 6507042 (2003-01-01), Mukai et al.
patent: 6816525 (2004-11-01), Stintz et al.
patent: 6992320 (2006-01-01), Ebe et al.
patent: 2001/0023942 (2001-09-01), Kim et al.
patent: 2001/0028055 (2001-10-01), Fafard et al.
patent: 2002/0075924 (2002-06-01), Mukai
patent: 2002/0079485 (2002-06-01), Stintz et al.
patent: 2002/0119680 (2002-08-01), Wang et al.
patent: 2003/0059971 (2003-03-01), Chua et al.
patent: 2005/0104083 (2005-05-01), Bader et al.
patent: 0 665 578 (1995-08-01), None
patent: 2373371 (2002-09-01), None
patent: 09-326506 (1997-12-01), None
patent: 2000-196193 (2000-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming quantum dots for extended wavelength... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming quantum dots for extended wavelength..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming quantum dots for extended wavelength... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3767715

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.