Method of forming PZT ferroelectric film

Details Method of forming PZT ferroelectric film Method of forming PZT ferroelectric film

2006-04-11

2006-04-11

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S681000

Reexamination Certificate

active

07026169

ABSTRACT:
A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO3on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.

REFERENCES:
patent: 5714194 (1998-02-01), Komai et al.
patent: 2003/0175425 (2003-09-01), Tatsumi

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