Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2007-08-21
2007-08-21
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Electron emitter manufacture
C438S237000, C257S029000, C257S029000
Reexamination Certificate
active
11138285
ABSTRACT:
A method for forming a protective structure of active matrix triode field emission device is provided. The method comprises the steps of forming a silicon active region; depositing a gate oxide layer over the silicon active region; depositing and patterning a first metal layer over the gate oxide layer; doping impurities into portions of the said silicon active region to form a source/drain in a first conductive type and simultaneously to form a diode having a terminal in the first conductive type; forming ILD layer over the first metal layer and forming a plurality of contact holes thereon; depositing and patterning a second metal layer; forming a passivation layer over the second metal layer and forming a plurality of via holes thereon, depositing and patterning a third metal layer to form a gate and a tip structure.
REFERENCES:
patent: 5844370 (1998-12-01), Cathey et al.
patent: 7015496 (2006-03-01), Ohnuma et al.
patent: 2003/0122197 (2003-07-01), Hwang et al.
patent: 2005/0156242 (2005-07-01), Yamaguchi et al.
patent: 2005/0161742 (2005-07-01), Isobe et al.
Lee Chun-Tao
Tseng Huai-Yuan
Industrial Technology Research Institute
Nguyen Thanh
Troxell Law Office PLLC
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