Method of forming precisely cross-sectioned electron-transparent

Details Method of forming precisely cross-sectioned electron-transparent Method of forming precisely cross-sectioned electron-transparent

1997-09-11

1999-08-17

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

438 22, 438 48, G01R 3126, H01L 2166

Patent

active

059406780

ABSTRACT:
A method of forming precisely cross-sectioned electron-transparent samples, includes removing, from a wafer, a chip containing a desired viewing site for analysis. At least one metallic mask is formed on a surface of the chip and over the viewing site using a focused ion beam microscope. Using a reactive ion etching technique, the chip is etched in a direction essentially perpendicular to the surface of the chip to form a thin viewing surface under the metallic mask. The thickness of the thin viewing surface is further reduced using a focused ion beam milling technique, to form an extremely thin electron-transparent sample.

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