Method of forming pre-metal dielectric layer of...

Details Method of forming pre-metal dielectric layer of... Method of forming pre-metal dielectric layer of...

2011-07-19

2011-07-19

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C257SE23179, C257SE21525

Reexamination Certificate

active

07981762

ABSTRACT:
A method of forming a pre-metal dielectric (PMD) layer of a semiconductor device using a chemical mechanical polishing (CMP) process which can be suitable for easily recognizing an alignment key. Such a method can reduce or otherwise eliminate alignment key erosion due to CMP by previously forming an alignment key pattern of polysilicon in an active region of a semiconductor scribe lane.

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