Method of forming power semiconductor devices with controllable

Details Method of forming power semiconductor devices with controllable Method of forming power semiconductor devices with controllable

1996-09-05

1999-02-16

Bowers, Charles

Semiconductor device manufacturing: process

Making regenerative-type switching device

438627, H01L 21332

Patent

active

058720286

ABSTRACT:
A method of manufacturing a semiconductor device and device in which a sacrificial N shelf layer is grown on a P+ semiconductor substrate to contain the out-diffusion of dopant from the substrate. An N+ buffer layer is grown on the N shelf layer and an N- epitaxial layer is grown on the N+ buffer layer. The presence of the N shelf layer, which is consumed by the substrate dopant during further device fabrication, allows the integrated dopant level of the N+ buffer layer to be accurately controlled in the finished device.

REFERENCES:
patent: 5479552 (1995-12-01), Kitamura et al.
patent: 5703385 (1998-01-01), Zambrano

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