Etching a substrate: processes – Forming or treating optical article
Patent
1994-08-15
1995-06-27
Dang, Thi
Etching a substrate: processes
Forming or treating optical article
216 99, H01L 2100
Patent
active
054276489
ABSTRACT:
Porous silicon is formed by patterning a single crystal silicon substrate prior to electrochemically etching the same. The process is a controlled method of fabricating silicon microstructures which exhibit luminescence and are useful in optoelectronic devices, such as light emitting diodes. The porous silicon produced has a high degree of uniformity and repeatability.
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Dutta Mitra
Pamulapati Jagadeesh
Shen Hongen
Anderson William H.
Dang Thi
The United States of America as represented by the Secretary of
Zelenka Michael
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