Method of forming porous silicon

Details Method of forming porous silicon Method of forming porous silicon

1994-08-15

1995-06-27

Dang, Thi

Etching a substrate: processes

Forming or treating optical article

216 99, H01L 2100

Patent

active

054276489

ABSTRACT:
Porous silicon is formed by patterning a single crystal silicon substrate prior to electrochemically etching the same. The process is a controlled method of fabricating silicon microstructures which exhibit luminescence and are useful in optoelectronic devices, such as light emitting diodes. The porous silicon produced has a high degree of uniformity and repeatability.

REFERENCES:
patent: 3619608 (1971-11-01), Westerberg
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4109029 (1978-08-01), Ozdemir et al.
patent: 4348804 (1982-09-01), Ogawa et al.
patent: 5106764 (1992-04-01), Harriott et al.
patent: 5139624 (1992-08-01), Searson et al.
patent: 5147823 (1992-09-01), Ishibashi et al.
patent: 5206523 (1993-04-01), Goesele et al.
patent: 5318676 (1994-06-01), Sailor et al.
patent: 5358600 (1994-10-01), Canham et al.
L. T. Cahnam, "Silicon Quantum Wire Array Fabricated by Electrochemical and hemical Dissolution of Wafers", Appl. Phys. Lett., vol. 57, No. 10, Sep. 3, 1990.
V. Lehman et al, "Porous Silicon Formation: A Quantum Wire Effect", Appl. Phys. Lett., vol. 58, No. 8, Feb. 25, 1991.
D. Manos et al, "Plasma Etching An Introduction", (Chapter 6), Academic Press, Inc. 1989.
S. M. Hu et al, "Observation of Etching of n-Type Silicon in Aqueous HF Solutions", J. Electrochemical Society, vol. 114, p. 414, Apr. 1967.

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