Coating processes – Measuring – testing – or indicating
Patent
1993-03-26
1994-12-13
Padgett, Marianne
Coating processes
Measuring, testing, or indicating
427554, 427555, 437173, 437174, 437233, B05D 306, H01L 21461, H01L 21302
Patent
active
053728360
ABSTRACT:
In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasma CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.
REFERENCES:
patent: 4292091 (1981-09-01), Togei
patent: 4309225 (1982-01-01), Fan et al.
patent: 4332253 (1982-03-01), Pankove et al.
patent: 4377920 (1983-03-01), Shinada et al.
patent: 4406709 (1983-09-01), Celler et al.
patent: 4439245 (1984-03-01), Wu
patent: 4466179 (1984-08-01), Kasten
patent: 4473433 (1984-09-01), Basch et al.
patent: 4571348 (1986-02-01), Troxell
patent: 4619034 (1986-10-01), Janning
patent: 4724219 (1988-02-01), Ridinger
patent: 4785962 (1988-11-01), Toshima
patent: 4888302 (1989-12-01), Ramesh
patent: 4965225 (1990-10-01), Yamagishi et al.
patent: 4985722 (1991-01-01), Ushijima et al.
patent: 4994300 (1985-01-01), Schwuttke et al.
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5186594 (1993-02-01), Toshima et al.
patent: 5186718 (1993-02-01), Tepman et al.
Leas et al, IBM Tech Disc. Bulletin, vol. 23, #9, Feb. 1981 "Method for Laser Annealing of Polysilicon with Reduced Damage".
Nishimura et al, Jap. Journal Appl. Phys., vol. 21, 1982--no month "Recrystallization of Si Film on Nitride/Oxide Double Insulating Structure by CW Laser Irradiation".
Hama Kiichi
Hata Jiro
Imahashi Issei
Padgett Marianne
Tokyo Electron Limited
LandOfFree
Method of forming polycrystalling silicon film in process of man does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming polycrystalling silicon film in process of man, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming polycrystalling silicon film in process of man will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1191939