Method of forming polycrystalline silicon thin layer

Details Method of forming polycrystalline silicon thin layer Method of forming polycrystalline silicon thin layer

1999-02-23

2000-07-11

Beck, Shrive

Coating processes

Electrical product produced

Photoelectric

427204, 42725518, 4273762, 4274192, 4274197, 427452, 427568, 427578, B05D 102, B05D 302, B05D 136

Patent

active

060869453

ABSTRACT:
A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silicon thin film thereby to recrystallize the silicon thin film and hence to enlarge an average particle diameter of the polycrystalline silicon fine particles. The silicon thin film is formed by depositing the polycrystalline silicon fine particles directly on the surface of the substrate, and meets a relationship represented by the following formula (1)

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patent: 5866471 (1999-02-01), Beppu et al.
S. Sivoththaman, et al. "Optical Lamp Recrystallization Of Plasma-Sprayed Silicon Deposits On Different Substrates", Mat. Res. Bull., vol. 27, 1992, pp. 425-430.
Fumitaka Tamura, et al. "Fabrication Of Poly-Crystalline Silicon Films Using Plasma Spray Method", Solar Energy Materials And Solar Cells, vol. 34, pp. 263-270.
Tamura et al., "Fabrication of poly-crystalline silicon films using plasma spray method", Solar Energy Materials And Solar Cells, vol. 34, pp. 263-270, 1994.
Japanese patent abstract 07278814 by Osaka Gas, abstract, use sections, Oct. 1995.

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