Method of forming polycrystalline silicon thin films for semicon

Details Method of forming polycrystalline silicon thin films for semicon Method of forming polycrystalline silicon thin films for semicon

1994-03-01

1995-11-07

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, H01L 2120

Patent

active

054647959

ABSTRACT:
A semiconductor thin film is formed by depositing an amorphous silicon thin film and heat-treating the deposited amorphous silicon thin film. The amorphous silicon thin film is formed by a chemical vapor deposition (CVD) process while a dopant impurity is introduced, the film being not thicker than 50 nanometers. In the reaction gases used, the ratio (D/S) between the numbers S and D of atoms of silicon and dopant impurity in reaction gases is as large as 0.05.about.0.2. The polycrystalline silicon thin film thus formed is with reduced electrical resistivities.

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