Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN i

Details Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN i Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN i

1999-05-27

2000-08-29

Malinowski, Walter

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 46, G02F 1136

Patent

active

06111619&

ABSTRACT:
The invention provides a TFT LCD structure and method for using copper conductors on polycrystalline silicon TFTs. A top gate TFT architecture is employed with the copper sandwiched between layers of TiN. Conventional photolithographic and wet etch patterning is used for the copper and TiN conductors. Copper metal gates and source/drain electrodes are provided, yielding TFTs of a quality comparable to TFTs employing aluminum electrodes and conductors. A method of fabrication is also disclosed.

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