Method of forming polycrystalline silicon film in process of man

Details Method of forming polycrystalline silicon film in process of man Method of forming polycrystalline silicon film in process of man

1996-12-13

1999-11-02

Padgett, Marianne

Coating processes

Measuring, testing, or indicating

427554, 427555, 438795, 438797, 438799, 438 16, B05D 306, H01L 21461, H01L 21306

Patent

active

RE0363715

ABSTRACT:
In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasam CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.

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