Method of forming polycrystalline semiconductor interconnections

Details Method of forming polycrystalline semiconductor interconnections Method of forming polycrystalline semiconductor interconnections

1978-10-12

1980-07-29

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 219121L, 427 531, 357 23, 357 59, 357 91, H01L 21263

Patent

active

042149185

ABSTRACT:
Low resistance, doped polycrystalline semiconductor connection patterns are fabricated by scanning a doped polycrystalline layer with a laser beam thereby increasing the crystal grain size, reducing defects in the grains, increasing charge carrier mobility and as a result reducing material resistivity. Semiconductor devices having increased circuit density and speed are realized through use of laser annealed polycrystalline semiconductor resistors, contacts and interconnections.

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