Method of forming platinum ohmic contact to p-type silicon carbi

Details Method of forming platinum ohmic contact to p-type silicon carbi Method of forming platinum ohmic contact to p-type silicon carbi

1994-04-22

1995-04-25

Fourson, George

Fishing, trapping, and vermin destroying

148DIG148, H01L 21283

Patent

active

054098599

ABSTRACT:
A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.

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