Fishing – trapping – and vermin destroying
Patent
1992-07-28
1993-12-14
Quach, T. N.
Fishing, trapping, and vermin destroying
437100, 437179, 437178, 148DIG148, H01L 21283
Patent
active
052702529
ABSTRACT:
Platinum Schottky contacts remaining stable up to 800.degree. C. have been produced. The adhesion of the platinum deposited at slightly elevated temperatures is good. Platinum provides a metallization that is physically rugged and thermally stable. The Schottky contacts are made on B-Silicon carbide.
REFERENCES:
patent: 1708571 (1929-04-01), Hartman et al.
patent: 3047439 (1962-07-01), Van Daal et al.
patent: 3063876 (1962-11-01), LeMay et al.
patent: 3078219 (1963-02-01), Chang
patent: 3662458 (1972-05-01), Formigoni et al.
patent: 4068134 (1978-01-01), Tobey, Jr. et al.
patent: 4170818 (1979-10-01), Tobey, Jr. et al.
patent: 4408387 (1983-10-01), Kiriseko
patent: 4492743 (1985-01-01), Howe
patent: 4513309 (1985-04-01), Cricchi
patent: 4521800 (1985-06-01), Howe
patent: 4534099 (1985-08-01), Howe
patent: 4592799 (1986-06-01), Hayafuji
patent: 4643527 (1987-02-01), Magarino et al.
patent: 4765845 (1988-08-01), Takada et al.
patent: 4769686 (1988-09-01), Horiuchi et al.
patent: 4990994 (1991-02-01), Furukawa et al.
patent: 5043773 (1991-08-01), Precht et al.
patent: 5184499 (1993-02-01), Fujii et al.
patent: 5187547 (1993-02-01), Niina et al.
Hall, R. N., "Electrical Contacts to Silicon Carbide", J. Appl. Phys., 29, Jun. 1958, pp. 914-917.
Brandes, R. W., et al., "The Eching of .alpha.-Silicon Carbide", Brit. J. Appl. Phys., 1967, vol. 18, pp. 905-912.
Suzuki, A., et al., "Thermal Oxidation of SiC . . . ", Japanese J. Appl. Phys., 21(4), Apr. 1982, pp. 579-585.
Verenchikova, R. G., et al., "Influence of vacancies on . . . ", Sov. Phys. Semicond., 17(10), Oct. 1983, pp. 1123-1125.
Wu, S. Y., et al., "Au. SiC Schottky Barrier Diodes"; Solid State Electronics, 1974, vol. 17, pp. 683-687.
Hagen, S. H., "Surface-Barrier Diodes on Silicon Carbide", J. Appl. Phys., vol. 30, No. 3, 15 Feb. 1968, pp. 1458-1461.
Ioannou et al., "The Effect of Heat Treatment on Au Schottky Contacts on B-SiC", Reprinted from IEEE Transactions on Electron Devices, vol. ED-34, No. 8, Aug. 1987.
Edmond et al., "Electrical Contacts to Beta Silicon Carbide Thin Films", Preprint of paper Published in Journal of Vacuum Science and Technology between 1988 and 1989.
Pt Schottky Contacts on B-SiC, NCSU Review Meeting on SiC (Oct. 26-27, 1987).
Edelberg Barry A.
McDonnell Thomas E.
Quach T. N.
United States of America as represented by the Secretary of the
LandOfFree
Method of forming platinum and platinum silicide schottky contac does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming platinum and platinum silicide schottky contac, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming platinum and platinum silicide schottky contac will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1705136