Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1981-03-23
1982-11-30
Powell, William A.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
29591, 148187, 156643, 156644, 156646, 156653, 156657, 1566611, 204192E, 357 71, 430312, 430313, 430317, B05D 512, B44C 122, C03C 1500, C03C 2506
Patent
active
043615996
ABSTRACT:
In the fabrication of semiconductor devices it has been found useful to employ plasma etching to create contact holes in the insulating layers that cover the wafers being processed. In particular, when wafers are being fabricated that employ small diameter contacts, it is difficult to ensure that all contact holes are created simultaneously. If etching is continued sufficiently to make sure that all of the contact holes over the wafer are fully etched, it is found that a certain proportion are overetched. If the silicon semiconductor is converted to a metal silicide in the region where contact is to be made subsequently, its plasma etch rate can be reduced sufficiently to avoid overetching.
REFERENCES:
patent: 3546013 (1970-12-01), Perri et al.
patent: 3708360 (1973-01-01), Wakefield et al.
patent: 3716428 (1973-02-01), Amouroux et al.
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4184909 (1980-01-01), Chang et al.
patent: 4283439 (1981-08-01), Higashinakagawa et al.
National Semiconductor Corporation
Powell William A.
Schulte Neil B.
Winters Paul J.
Woodward Gail W.
LandOfFree
Method of forming plasma etched semiconductor contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming plasma etched semiconductor contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming plasma etched semiconductor contacts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-195825