Method of forming photovoltaic quality amorphous alloys by passi

Metal treatment – Compositions – Heat treating

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148174, 427 51, 427 74, 427 85, 427 86, 136258, 136249, 357 2, H01L 21203, H01L 3118

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045696977

ABSTRACT:
Relatively dense, photovoltaic quality amorphous alloys which are characterized by reduced density of defect states in the band gaps thereof and which are particularly suited for use in tandem photovoltaic devices are formed by evaporating amorphous germanium and amorphous silicon in an ultrahigh vacuum environment, diffusing a density of states reducing element into and through the amorphous material, and finally annealing the resultant amorphous alloy to complete the diffusion process. The amorphous alloy, so formed, is a substantially contaminant-free, substantially tetrahedrally coordinated material. Fluorine is the preferred density of states reducing element which is added to the amorphous material for reducing the density of states through compensation, and for orbital promotion and expansion.

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J. Jang et al., "Hydrogenation and Doping of Vacuum-Evaporated A-Si", J. Non Crystalline Solids, vols. 35-36, pp. 313-318 (1980).
V. Premachandran et al., "Chlorine Implantation into Amorphous Germanium", Thin Solid Films, vol. 88, pp. 335-338 (Feb. 1982).
G. Nakamura et al., "High Efficiency Tandem Type Solar Cells Consisting of A-Si:H and A-SiGe:H, Proceedings, 4th E.C. Photovoltaic Solar Energy Conf. (1982), Reidel Pub. Co., pp. 616-620.
D. Kaplan et al., "Hydrogenation of Evaporated Amorphous Silicon by Plasma Treatment", Appl. Phys. Lett., vol. 33, pp. 440-442 (1978).

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