Method of forming patterns in organic coatings films and layers

Details Method of forming patterns in organic coatings films and layers Method of forming patterns in organic coatings films and layers

1996-12-19

1998-06-09

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

427259, 427261, 427269, 427270, 427272, 427273, 427282, 427287, 427322, 427327, 427335, 4274071, 427409, 4274121, 427555, 427556, 427557, 427560, C08J 704

Patent

active

057630160

ABSTRACT:
Water-free, gaseous sulfur trioxide is used as an agent to form patterns in organic coatings, films, and layers, including photoresists, by etching areas exposed to the agent through an overlying mask or by developing a latent image of the desired pattern using the agent as a dry-developer.

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patent: 5037506 (1991-08-01), Gupta et al.
patent: 5158100 (1992-10-01), Tanaka et al.
Stanley Wolf and Richard N. Tauber, "Silicon Processing For The VLSI Era", Process Technology, vol. 1 (1986), pp. 564-564; (no month avail.).
"Choose the Right Process to Strip Your Photoresist", Semiconductor International, Feb. 1990, pp. 83-87.
"New Concerns in Dry Oxygen Ashing", Semiconductor International, Mar. 1996, p. 44.
"What's Driving Resist Dry Stripping?", Semiconductor International, Nov. 1994, pp. 61-64.

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