Method of forming patterns and method of manufacturing...

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

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C216S044000, C216S046000, C216S058000, C216S075000

Reexamination Certificate

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07618549

ABSTRACT:
According to one embodiment, a method of forming patterns is provided, in which the method including forming a resist on an underlying material, pressing a stamper having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, onto the resist to form a patterned resist having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, forming a protective film on the patterned resist, performing anisotropic etching to leave the protective film on the tapered sidewalls of protrusions of the patterned resist, etching a resist residue remaining in recesses of the patterned resist using the protective film as a mask, and etching the underlying material using the protective film and the patterned resist as a mask.

REFERENCES:
patent: 5994226 (1999-11-01), Kadomura
patent: 7352529 (2008-04-01), Hibi et al.
patent: 7365103 (2008-04-01), Willson et al.
patent: 2004/0209470 (2004-10-01), Bajorek
patent: 2005/0064057 (2005-03-01), Morita
patent: 2006/0076509 (2006-04-01), Okino et al.
patent: 6-93442 (1994-11-01), None
patent: 2003-263794 (2003-09-01), None
C. Gourgon at al., “Influence of Pattern Density in Nanoimprint Lithography”, J. Vac Sci. Technol B 21(1), Jan./Feb. 2003.

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