Etching a substrate: processes – Forming or treating article containing magnetically...
Reexamination Certificate
2006-10-16
2009-11-17
Tran, Binh X (Department: 1792)
Etching a substrate: processes
Forming or treating article containing magnetically...
C216S044000, C216S046000, C216S058000, C216S075000
Reexamination Certificate
active
07618549
ABSTRACT:
According to one embodiment, a method of forming patterns is provided, in which the method including forming a resist on an underlying material, pressing a stamper having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, onto the resist to form a patterned resist having patterns of protrusions and recesses, sidewalls of which protrusions are tapered, forming a protective film on the patterned resist, performing anisotropic etching to leave the protective film on the tapered sidewalls of protrusions of the patterned resist, etching a resist residue remaining in recesses of the patterned resist using the protective film as a mask, and etching the underlying material using the protective film and the patterned resist as a mask.
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C. Gourgon at al., “Influence of Pattern Density in Nanoimprint Lithography”, J. Vac Sci. Technol B 21(1), Jan./Feb. 2003.
Kamata Yoshiyuki
Kikitsu Akira
Sakurai Masatoshi
Shirotori Satoshi
Kabushiki Kaisha Toshiba
Pillsbury Winthrop Shaw & Pittman LLP
Tran Binh X
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