Method of forming patterned refractory metal films by selective

Details Method of forming patterned refractory metal films by selective Method of forming patterned refractory metal films by selective

1980-11-24

1982-06-08

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 156628, 357 65, 427 38, B05D 306, B05D 512, H01L 21312

Patent

active

043332269

ABSTRACT:
A thin film of a metal which is capable of oxidation and sublimation is formed on a major surface of a semiconductor substrate, and a portion of a major surface of the thin metallic film is irradiated with an oxygen ion beam to convert a portion of the thin metallic film to an oxide, and subsequently the thin metallic film is heat treated to remove the oxide by sublimation, whereby electrodes or wiring for a semiconductor integrated circuit are formed by the remaining thin metallic film.

REFERENCES:
patent: 3622410 (1971-11-01), Carlson
patent: 4093503 (1978-06-01), Harris et al.
patent: 4108715 (1978-08-01), Ishikawa et al.
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
Ballantyne et al., Jour. Vac. Science & Tech. 10 (1973) 1094.

Affiliated with

Also associated with

Rating

Method of forming patterned refractory metal films by selective does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming patterned refractory metal films by selective , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming patterned refractory metal films by selective will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-548139