Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-06-27
1993-07-13
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505702, 505728, 427 63, 427526, 427529, 257 31, B05D 512, B05D 306
Patent
active
052273644
ABSTRACT:
A method of forming a fine groove on a superconducting thin film. A superconducting oxide thin film is formed on a MgO substrate, and a damaged layer is formed thereon by irradiating the superconducting thin film with focused ion beams to such a degree that not sputter is generated and the crystalline structure of the superconducting thin film is disturbed. The damaged layer is then removed by treatment with a strong alkali such as KOH. Thus, a fine groove is effectively formed. By inserting an oxide layer between the substrate and the superconducting thin film, a Josephson junction device suitable for superconducting transistors is produced.
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Fujiwara Shuji
Nakao Masao
Nemoto Masaaki
Yuasa Ryokan
Beck Shrive
King Roy V.
Sanyo Electric Co,. Ltd.
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