Method of forming pattern of semiconductor device

Details Method of forming pattern of semiconductor device Method of forming pattern of semiconductor device

2007-11-29

2009-06-30

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S715000, C438S924000, C257SE21026, C257SE21039

Reexamination Certificate

active

07553771

ABSTRACT:
A method of forming a pattern of a semiconductor device comprises forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate; forming a second resist pattern over the second hard mask film; etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern; performing an ion-implanting process on the first resist film with the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film, and selectively etching the first resist film with the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern.

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patent: 63-043320 (1988-02-01), None
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Korean Intellectual Property Office Notice of Rejection for Application No. 10-2007-0046693, dated Jul. 30, 2008.

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