Method of forming pattern in manufacturing semiconductor device

Details Method of forming pattern in manufacturing semiconductor device Method of forming pattern in manufacturing semiconductor device

1991-02-12

1992-01-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 6, 437194, 437248, 437925, 437902, H01L 2158, H01L 21328

Patent

active

050828002

ABSTRACT:
A method of manufacturing a semiconductor device including a semiconductor substrate (10) comprising n-emitter regions (14a-14c) formed before the substrate is brazed on a molybdenum plate (1). Due to the difference between respective thermal expansion coefficients of silicon and molybdenum, the substrate is warped through the brazing process and the horizontal positions of the n-emitter regions are shifted. A mask pattern for patterning an aluminum layer (31) is corrected in position to prevent a patterned aluminum layer from extending over the peripheral areas of the n-emitter regions.

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patent: 4141136 (1979-02-01), Henry et al.
patent: 4370180 (1983-01-01), Azuma et al.
patent: 4792530 (1988-12-01), Nilarp
patent: 4942139 (1990-07-01), Korwin-Pawlowski

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