Method of forming pattern

Details Method of forming pattern Method of forming pattern

2006-11-07

2010-11-09

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S394000

Reexamination Certificate

active

07829246

ABSTRACT:
Formation of a constricted portion in an interconnect pattern is inhibited while moderating design rule for a phase shifting mask. When an interconnect pattern including a plurality of straight lines that are arranged in parallel is formed in a photoresist film on or over a wafer, the process thereof comprises: providing different phase apertures114and116in longitudinal external side of the interconnect apertures110and112in the phase shifting mask100, the different phase aperture providing a phase of light that is different from a phase of light through the interconnect apertures110and112; transferring a basic pattern in the photoresist film via an exposure by using the phase shifting mask100, the basic pattern containing the interconnect pattern and a temporary pattern formed from an end of the interconnect pattern toward a longitudinal external side thereof; and transferring a temporary pattern in the photoresist for removing the temporary pattern from the basic pattern via an exposure by using a trim mask.

REFERENCES:
patent: 6518180 (2003-02-01), Fukuda
patent: 6806037 (2004-10-01), Goldbach et al.
patent: 2004/0047109 (2004-03-01), Baik
patent: 2005/0042527 (2005-02-01), Pierrat
patent: 2005/0136340 (2005-06-01), Baselmans et al.
patent: 2001-042545 (2001-02-01), None

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