Method of forming passivated polycrystalline semiconductors

Details Method of forming passivated polycrystalline semiconductors Method of forming passivated polycrystalline semiconductors

1985-03-14

1986-09-23

Weisstuch, Aaron

Metal treatment

Compositions

Heat treating

136258, 357 59, 427 39, 427 74, 427 86, H01L 21223, H01L 21322

Patent

active

046133828

ABSTRACT:
A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium, and cesium included mainly around grain boundaries of the polycrystalline semiconductor film. The simultaneous inclusion of one of the halogen elements and one of the monovalent metal elements of the group described above is more effective to quench charges of the elements included. The content of the elements included is up to 40% by atomic ratio. As a result, the electronic characteristic of the polycrystalline semiconductor film are substantially improved.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4239554 (1980-12-01), Yamazaki
patent: 4342044 (1982-07-01), Ovshinsky et al.
Chu et al, "Thin Film Polycrystalline Silicon Solar Cells", 13th IEEE Photovoltaic Spec. Conf. (78) Washington, Jun. 1978, pp. 1106-1110.
Heller et al, "Thin Film Polycrystalline n-GaAs Semiconductor Liquid Junction Solar Cells", 14th IEEE Photovoltaic Spec. Conf., (1980) San Diego, pp. 366-368, Jan. 1980.
Levinson et al, "Conductivity Behavior in Polycrystalline Semiconductor Thin Film Transistors", J. Appl. Phys., vol. 53, No. 2, pp. 1193-1202, Feb. 1982.
Seager et al, "Passivation of Grain Boundaries in Polycrystalline Silicon", Appl. Phys. Lett., vol. 34, No. 5, pp. 337-340, Mar. 1979.
Kamins et al, "Hydrogenation of Transistors Fabricated in Polycrystalline Silicon Films", IEEE Electron Dev. Lett., vol. EDL-1, No. 8, pp. 159-160, Aug. 1980.
Seager et al, "Improvement of Polycrystalline Silicon Solar Cells with Grain-Boundary Hydrogenation Techniques", Appl. Phys. Lett., vol. 36, No. 10, pp. 831-832, May 1980.

Affiliated with

Also associated with

Rating

Method of forming passivated polycrystalline semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming passivated polycrystalline semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming passivated polycrystalline semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-764908