Method of forming para-dielectric and ferro-dielectric capacitor

Details Method of forming para-dielectric and ferro-dielectric capacitor Method of forming para-dielectric and ferro-dielectric capacitor

1999-11-09

2000-12-12

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01G 706

Patent

active

06159752&

ABSTRACT:
In a method of forming dielectric films over a substrate, a dielectric film having two parts, each with a first dielectric property, is formed and the first part of the dielectric film is subjected to a heat treatment to cause the first part of the dielectric film to have a second dielectric property different from the first dielectric property, while maintaining the first dielectric property of the second part.

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Nakao et al., "Electrical Properties of PZT Thim Films Derived From Sol-Gel solution Containing Photo-Sensitive Water-Generator", IEEE, 1995, pp. 450-453.
Jingping et al., "Preparation of Pb(Zr,Ti)O.sub.3 Ferroelectric Thin Films by a Pulsed Laser Ablation Technique", IEEE, 1991, pp. 560-563.

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