Method of forming oxidic high T.sub.c superconducting materials

Details Method of forming oxidic high T.sub.c superconducting materials Method of forming oxidic high T.sub.c superconducting materials

1989-09-25

1991-10-08

Kunemund, Robert

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505729, 156621, 156622, 156662, 423593, C30B 1902

Patent

active

050554450

ABSTRACT:
A method of forming an epitaxial layer of an oxidic high T.sub.c superconductor on a substantially lattice matched monocrystalline substrate is described. The film is formed by liquid phase epitaxy utilizing a melt containing a nutriment composed of oxides of each element of the oxidic superconductor and a non-oxidic flux for such oxides. The preferred flux is an alkali halide. The monocrystalline substrate on which the film is dsposited is introduced into the melt and an epitaxial layer of oxidic superconductor is formed on the substrate.

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patent: 4865681 (1989-09-01), Mattes
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