Method of forming oxide isolation

Details Method of forming oxide isolation Method of forming oxide isolation

1992-12-03

1993-08-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 73, 148DIG117, 148DIG112, H01L 2176

Patent

active

052368629

ABSTRACT:
Defect-free field oxide isolation (34) is formed by oxidizing through a silicon nitride layer (30) which overlies the isolation regions (22) of the silicon substrate (12). Additionally, the silicon nitride layer (30) acts as a diffusion barrier during field growth, and thus inhibits the lateral diffusion of oxygen underneath the oxidation mask (18). Therefore, field oxide encroachment into the adjacent active regions is effectively reduced. Moreover, field oxide encroachment is also reproducibly controlled, and therefore integrated circuits with high device packing densities can be fabricated.

REFERENCES:
patent: 4462846 (1984-07-01), Varshney
patent: 4538343 (1985-09-01), Pollack et al.
patent: 4563227 (1986-01-01), Sakai et al.
patent: 4775644 (1988-10-01), Szeto
patent: 4923563 (1990-05-01), Lee et al.
patent: 4927780 (1992-05-01), Roth et al.
patent: 5137843 (1992-08-01), Kim et al.
patent: 5196367 (1993-03-01), Lu et al.
J. M. Sung et al., "Reverse L-Shape Sealed Poly-Buffer LOCOS Technology," IEEE Transactions on Electron Devices, vol. 11, No. 11, Nov. 1990, pp. 549-551.

Affiliated with

Also associated with

Rating

Method of forming oxide isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming oxide isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming oxide isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2243487