Method of forming organic semiconductor layer pattern

Details Method of forming organic semiconductor layer pattern Method of forming organic semiconductor layer pattern

2006-06-16

2011-11-15

Lin, James (Department: 1715)

Coating processes

Electrical product produced

Fluorescent or phosphorescent base coating

C427S146000, C427S545000, C427S557000

Reexamination Certificate

active

08057848

ABSTRACT:
A donor substrate and a method of forming an organic semiconductor layer pattern using the donor substrate, whereby a donor substrate is formed using an organic semiconductor precursor having a thermally decomposable substituent through a wet process, the organic semiconductor precursor substrate in the donor substrate is transferred to a receptor substrate as a pattern and heated, and thus is changed into an organic semiconductor. As a result, an organic semiconductor layer pattern is obtained. The method can be used in the manufacture of various devices such as organic light emitting diode and organic thin film transistor. A low-molecular weight organic semiconductor layer pattern can be formed through a wet process, not through deposition. Thus, using the method, a flat display device can be conveniently manufactured at low cost.

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Office action from Chinese Patent Office issued in Applicant's corresponding Chinese Patent Application No. 200610092596.8 dated Feb. 25, 2010 and its English translation.

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