Method of forming ohmic electrode

Details Method of forming ohmic electrode Method of forming ohmic electrode

2005-05-03

2005-05-03

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S004000, C117S007000, C117S008000, C117S009000

Reexamination Certificate

active

06887311

ABSTRACT:
There is provided a method of forming an ohmic electrode, including the steps of: forming a hafnium layer on a surface of an n type nitride-based compound semiconductor layer to have a thickness of 1 to 15 nm; forming an aluminum layer on the hafnium layer; and annealing the hafnium layer and the aluminum layer to form a layer formed of hafnium and aluminum mixed together.

REFERENCES:
patent: 4141020 (1979-02-01), Howard et al.
patent: 4310568 (1982-01-01), Howard et al.
patent: 0650201 (1995-04-01), None
patent: 7-045867 (1995-02-01), None
patent: 2001-15452 (2001-01-01), None
Terano et al.; “Study of Hf-Based Ohmic Electrode for N-Type GaN”; Proceedings of the 60thAnnual Meeting of the Japan Society of Applied Physics, p. 302, Sep. 1999.

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