Method of forming ohmic contacts

Coating processes – Electrical product produced – Condenser or capacitor

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Details

29572, 156651, 156655, 252 792, 252 793, 252 795, 357 65, 427 74, 427309, B05D 512, B44C 122, C03C 1500, C03C 2506

Patent

active

044566301

ABSTRACT:
A method of forming ohmic contacts with thin film p-type semiconductor Class II B - VI A compounds comprising etching the film surface with an acidic solution, then etching with a strong basic solution and finally depositing a conductive metal layer.

REFERENCES:
patent: 2822250 (1958-02-01), DeNobel
patent: 2822299 (1958-02-01), DeNobel

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