Method of forming ohmic contact to a semiconductor body

Details Method of forming ohmic contact to a semiconductor body Method of forming ohmic contact to a semiconductor body

2008-06-10

2008-06-10

Le, Thao (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

C257SE29012, C257SE29013

Reexamination Certificate

active

07384826

ABSTRACT:
A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal.

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