Method of forming ohmic contact on GaAs by Ge film and implantin

Details Method of forming ohmic contact on GaAs by Ge film and implantin Method of forming ohmic contact on GaAs by Ge film and implantin

1984-04-20

1985-09-10

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148175, 148187, 148DIG140, 357 65, 357 91, 427 88, H01L 21283, H01L 754, H01L 21225

Patent

active

045404461

ABSTRACT:
A method of manufacturing a GaAs compound semiconductor device is disclosed. The method comprises steps of applying a Ge film on an n+ region for forming ohmic electrode thereon, injecting impurity ion into the Ge film with high concentration, applying metal of high melting point overall surface of the semiconductor body to an annealing treatment after final ion implantation step.

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patent: 4426765 (1984-01-01), Shahriary et al.

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