Method of forming ohmic contact electrodes for n-type semiconduc

Details Method of forming ohmic contact electrodes for n-type semiconduc Method of forming ohmic contact electrodes for n-type semiconduc

1991-07-23

1994-03-29

Maples, John S.

Fishing, trapping, and vermin destroying

437189, 437247, 257741, H01L 21441

Patent

active

052984613

ABSTRACT:
An ohmic contact electrode is formed on an n-type semiconductor cubic boron nitride by using a IVB metal; an alloy with a IVB metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a VB metal; or an alloy with a VB metal.

REFERENCES:
patent: 5057454 (1991-10-01), Yoshida et al.
patent: 5187560 (1993-02-01), Yoshida et al.

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