Metal treatment – Compositions – Heat treating
Patent
1980-01-08
1982-02-09
Roy, Upendra
Metal treatment
Compositions
Heat treating
148187, 357 91, H01L 21322, H01L 752
Patent
active
043145957
ABSTRACT:
A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefective zone is formed in the surface region of the wafer, and the interior zone of the wafer becomes rich in micro defects capable of gettering impurities such as heavy metals.
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Kanamori Masaru
Kishino Seigo
Matsushita Yoshiaki
Nagasawa Kazutoshi
Yamamoto Kazuhiko
Roy Upendra
Vlsi Technology Research Association
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