Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1986-04-07
1991-02-26
Childs, Sadie
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 99, 427255, 4272554, 4272557, 427402, 437241, 437242, B05D 512, C23C 1630
Patent
active
049960814
ABSTRACT:
In an integrated circuit process a composite dielectric layer is formed on a monocrystalline, polycrystalline or amorphous silicon substrate by thermally growing a first silicon nitride layer from a surface layer of the silicon and then depositing a layer of amorphous or polycrystalline silicon. A second nitride layer is thermally grown from the deposited silicon to form a nitride-silicon-nitride, termed nitsinitride, composite dielectric. At least a top layer of the nitsinitride dielectric can be oxidized to produce an alternative composite dielectric, termed oxidized nitsinitride. Variation of the thickness of the dielectric layers and/or repeating the layering process sequence results in composite dielectrics of different thicknesses and dielectric properties.
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Ellul Joseph P.
Tay Sing P.
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