Method of forming multilayered wiring structure in semiconductor

Fishing – trapping – and vermin destroying

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437194, 437195, H01L 21285, H01L 213065

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active

054864925

ABSTRACT:
A method of forming a via structure having good characteristics in a semiconductor device having a multilayered wiring structure includes forming a thin film including a high melting point metal or a high melting point metal compound on at least the side wall of a via hole before a via plug including Al or an Al alloy is formed.

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S. R. Wilson et al.; "A High Performance, Four Metal Layer Interconnect System For Bipolar and BICMOS Circuits"; Jun. 12-13, 1990 VMIC Conference; pp. 42-48.
T. Kwok et al.; "Electromigration in a Two-Level Al-Cu Interconnection with W Studs"; Jun. 12-13, 1990 VMIC Conference; pp. 106-112.
C. A. Bollinger et al.; "An Advanced Four Level Interconnect Enhancement Module for 0.9 Micron CMOS"; Jun. 12-13, 1990 VMIC Conference; pp. 21-27.

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