Metal working – Method of mechanical manufacture – Electrical device making
Patent
1985-08-05
1987-05-05
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
29590, 156643, 156653, H01L 21316
Patent
active
046620648
ABSTRACT:
A multi-level metallization is formed by forming a patterned first level metallization layer on the surface of an isolating layer on a substrate of semiconductor material. A thick planarizing layer, preferably of a glass, is applied over the first level metallization layer and the exposed areas of the insulating layer with the planarizing layer bearing depressions in its surface over the exposed areas of the insulating layer. A photoresist layer is formed on the planarizing layer in the depressions in its surface with the portions of the planarizing layer over the first level metallization layer being exposed. The exposed areas of the planarizing layer are isotropically etched until the surface of the planarizing layer is substantially planar with the bottom of the deepest depression in the planarizing layer. Any photoresist material is removed and the planarizing layer is isotropically etched until its surface is substantially planar with the surface of the first level metallization layer. An inter-level insulating layer is applied over the planarized surfaces of the first level metallization layer at the planarizing layer, and a second level metallization layer is applied over the inter-level insulating layer.
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Flatley Doris W.
Hsu Sheng T.
Johansson Ronald J.
Hearn Brian E.
Plantz Bernard F.
Quach Tuan N.
RCA Corporation
Tripoli Joseph S.
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