Method of forming multi-layer interconnection

Details Method of forming multi-layer interconnection Method of forming multi-layer interconnection

1996-03-13

1997-10-14

Niebling, John

Fishing, trapping, and vermin destroying

437228, 437229, H01L 2144

Patent

active

056772432

ABSTRACT:
A method of forming a multi-layer interconnection is provided by which a resist pattern can be precisely formed by maintaining a uniform resist pattern film thickness and such problems as reduced electric resistance of a connecting portion and defective connection between a first interconnection layer and a second interconnection layer will not occur by ensuring a sufficient diameter of a contact hole. The method includes the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer to form a hole reaching the first conductive layer in the insulating layer; forming an organic layer at least filling the hole; removing a portion of the insulating layer at a portion at which the insulating layer contacts an organic layer filling the hole; removing the organic layer filling the hole to form a recessed portion continuous to the hole in the insulating layer; and forming a second conductive layer in such a manner that it fills the hole and the recessed portion.

REFERENCES:
patent: 4997790 (1991-03-01), Woo et al.
patent: 5026666 (1991-06-01), Hills et al.
patent: 5158910 (1992-10-01), Cooper et al.
patent: 5187121 (1993-02-01), Cote et al.
patent: 5434451 (1995-07-01), Dalal et al.
patent: 5461004 (1995-10-01), Kim
K. Kikuta et al, Multilevel Planarized-Trench-Aluminum (PTA) Interconnection using Reflow Sputtering and Chemical Mechanical Polishing, ULSI Device Development Laboratories, IEDM 1993, pp. 285-288.
Carter W. Kaanta et al, Dual Damascene: A ULSI wiring Technology, IBM General Technology Division, VMIC Conference, 1991, pp. 114-152.

Affiliated with

Also associated with

Rating

Method of forming multi-layer interconnection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming multi-layer interconnection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming multi-layer interconnection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1554995