Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Utilizing subatmospheric or superatmospheric pressure during...
Patent
1994-03-08
1996-01-16
Niebling, John
Electrolysis: processes, compositions used therein, and methods
Electrolytic coating
Utilizing subatmospheric or superatmospheric pressure during...
205165, 205181, 205205, 205926, 427585, 427600, C25D 500
Patent
active
054845173
ABSTRACT:
The invention comprises a method of forming a multi-element, thin hot film sensor on a polyimide film. The sensor is formed by first cleaning one surface of the polyimide. Then, under a continuous vacuum, the surface is simultaneously cleaned by ion bombardment while nickel is deposited by evaporation. The ion beam cleaning is discontinued and copper is then deposited to an initial thickness by evaporation without a break in the vacuum. The vacuum is then removed and a final thickness of copper is deposited by plating. Sensor patterns are then defined in the nickel and copper layers using conventional photolithography and etching techniques.
REFERENCES:
patent: 4433576 (1984-02-01), Shih et al.
patent: 4635475 (1987-01-01), Jones et al.
patent: 4848153 (1989-07-01), Stack et al.
patent: 4917940 (1990-04-01), Hopson, Jr.
patent: 4936146 (1990-06-01), Stack et al.
patent: 5158801 (1992-10-01), Hopson, Jr. et al.
P. Hopson, Jr. "Thin Hot-Film Srnsors on Polyimide Film", NASA Tech Brief, pub. date Mar. 8, 1993, pp. 102-103.
Helfrich George F.
Niebling John
The United States of America as represented by the Administrator
Wong Edna
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