Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2010-05-10
2010-12-21
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S357000, C438S468000, C257SE27068
Reexamination Certificate
active
07855098
ABSTRACT:
A technique for altering or repairing the operating state of a semiconductor device comprises field-controlled diffusion of mobile dopant atoms within the metal oxide crystal lattice. When heated (e.g., above 550 K) in the presence of an electric field (e.g., bias to ground of +/−50 V) the dopant atoms are caused to collect to form an ohmic contact, leaving a depletion region. Metal-semiconductor junction devices such as diodes, photo-diodes, photo-detectors, MESFETs, etc. may thereby be fabricated, repaired or modified.
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Kiesel Peter
Schmidt Oliver
Brown Valerie
Lebentritt Michael S
Palo Alto Research Center Incorporated
Small Jonathan A.
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